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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4
BTA1012E3
Features
* Low VCE(sat), VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A * Excellent DC current gain characteristics * Wide SOA
Symbol
BTA1012E3
Outline
TO-220AB
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTA1012E3 CYStek Product Specification
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25) Pd(TC=25) Tj Tstg
Limits -60 -50 -5 -5 -8 -1 2 25 150 -55~+150
Unit V V V *1 A A W C C
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT ton tstg tf Min. -50 70 30 10 Typ. 0.2 1 0.2 Max. -10 -10 -0.4 -1.2 240 Unit V A A V V MHz s s s
Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 2/4
Test Conditions IC=-10mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-4V, IC=-1A, f=1MHz VCC=-30V, IC=-3A, IB1=-IB2=0.15A, PW=20s
*Pulse Test : Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range O 70~140 Y 120~240
BTA1012E3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000 Saturation Voltage---(mV)
VCE=4V
Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
Current Gain---HFE
100
10
100 1 10 100 1000 Collector Current---IC(mA) 10000
1 1 10 100 1000 Collector Current---IC(mA) 10000
On Voltage vs Collector Current
10000
VBE(on)@VCE=4V
Power Derating Curve
2.5 Power Dissipation---PD(W) 2 1.5 1 0.5 0
On Voltage---(mV)
1000
100 0.1 1 10 100 1000 Collector Current---IC(mA) 10000
0
50
100
150
200
Ambient Temperature---TA()
Power Derating Curve
30 Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC()
BTA1012E3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
E C
Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 4/4
A D
B
A1012
H I G 4 P M 3 2 1 N
Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector
K
O
3-Lead TO-220AB Plastic Package CYStek Package Code: E3
*: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1012E3
CYStek Product Specification

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